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| TetraFET D1022UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 500MHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 PIN 4 DRAIN 1 GATE 2 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5 0.76 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.65R 45 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5 0.03 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 292W 70V 20V 15A -65 to 150C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.11/00 D1022UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 3A VDS = VGS 1 2.4 70 Typ. Max. Unit V 3 1 7 mA mA V mhos VGS(th)match 0.1 V TOTAL DEVICE GPS h Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance PO = 100W VDS = 28V f = 500MHz IDQ = 1.2A 10 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 180 90 7.5 dB % -- pF pF pF VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 0.6C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.11/00 D1022UK 3RXW : (IILFLHQF\ 3RXW : *DLQ G% 9GV 9 ,GT $ I 0+] 9GV 9 ,GT $ I 0+] 3LQ: 3RXW *DLQ 3LQ: 3RXW 'UDLQ(IILFLHQF\ Figure 1 Power Output and Efficiency vs. Input Figure 2 Power Output and Gain vs. Input Power OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 500 ZS W ZL W 2.0 - j2.2 2.6 - j0.6 N.B. Impedances measured terminal to terminal Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.11/00 D1022UK 15 +28V G a te -B ia s 100K 22K 100nF 5x5mm c o n ta c t pad D 1022U K 5x5mm c o n ta c t pad 470uF 100nF L2 L1 1nF 620pF 6 T2 0 .8 -1 4 p F 10pF 0 .8 -1 4 p F T3 10pF 0 .8 -1 4 p F T4 47pF T6 T5 680pF 0 .8 -1 4 p F 620pF 5x5mm c o n ta c t pad D 1022U K 5x5mm c o n ta c t pad D1022UK 500MHz TEST FIXTURE T1, 6 T2, 3,4, 5 L1 L2 7cm UT85 50 Ohm semi-rigid coax on Siemens B62152A1x1 2 hole ferrite core 7.7 cm UT85-15 15 ohm semi-rigid coax 6 turns 19swg enamelled copper wire, 3.5mm internal diameter 8.5 turns 19swg enamelled copper wire on Fair-rite FT82 ferrite core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.11/00 |
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